Dynamic Behavior of a Silicon Oxide Layer on Silicon Ultrafine Particles

Yuki Kimura, Hiroshi Ueno, Hitoshi Suzuki, Takeshi Sato, Toshiaki Tanigaki, Osamu Kido, Chihiro Kaito and Yoshio Saito
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Yuki Kimura: Department of Nanophysics in Frontier Project, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan
Hiroshi Ueno: Department of Nanophysics in Frontier Project, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan
Hitoshi Suzuki: Department of Nanophysics in Frontier Project, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan
Takeshi Sato: Department of Nanophysics in Frontier Project, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan
Toshiaki Tanigaki: Department of Nanophysics in Frontier Project, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan
Osamu Kido: Department of Nanophysics in Frontier Project, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan
Chihiro Kaito: Department of Nanophysics in Frontier Project, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan
Yoshio Saito: Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan

Surface Review and Letters (SRL), 2003, vol. 10, issue 02n03, 361-364

Abstract: In order to clarify the high-temperature behavior of a silicon oxide layer on the surface of Si ultrafine particles, the oxide layer has been studied using the atomic-resolution high-temperature stage of a transmission electron microscope. The natural oxide layer grown on Si ultrafine particles by exposure to air was an amorphous silicon oxide layer with a thickness of 1.5 nm. This oxide layer started to dissolve into the Si crystal upon heating at 500°C, and was fully dissolved into the Si crystal at 600°C in vacuum. When the specimen was cooled back to room temperature, the silicon oxide layer reappeared on the Si surface. This phenomenon, which can be detected only at high temperatures, is presented in this paper.

Keywords: Transmission electron microscopy; silicon particle; oxide layer; high-temperature behavior; in situobservation (search for similar items in EconPapers)
Date: 2003
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DOI: 10.1142/S0218625X03004986

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