DIRECT FABRICATION OF ORIENTEDMnSTHIN FILMS BY CHEMICAL BATH DEPOSITION

Dong Bo Fan, Hao Wang (), Yong Cai Zhang, Jie Cheng, Hui Yan and Masahiro Yoshimura
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Dong Bo Fan: The Key Laboratory of Advanced Functional Materials of Ministry of Education, Beijing University of Technology, Beijing 100022, China
Hao Wang: The Key Laboratory of Advanced Functional Materials of Ministry of Education, Beijing University of Technology, Beijing 100022, China
Yong Cai Zhang: The Key Laboratory of Advanced Functional Materials of Ministry of Education, Beijing University of Technology, Beijing 100022, China
Jie Cheng: The Key Laboratory of Advanced Functional Materials of Ministry of Education, Beijing University of Technology, Beijing 100022, China
Hui Yan: The Key Laboratory of Advanced Functional Materials of Ministry of Education, Beijing University of Technology, Beijing 100022, China
Masahiro Yoshimura: Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midoriku, Yokohama 226-8503, Japan

Surface Review and Letters (SRL), 2004, vol. 11, issue 01, 27-31

Abstract: Oriented thin films of manganese sulfide(MnS)have been deposited by a simple chemical bath deposition (CBD) method, which was a soft solution-processing route for preparation of semiconductor thin films. By varying deposition conditions (e.g. bath temperature, concentration ratio ofMn2+ions toCH3–CS–NH2and concentration ratio ofMn2+ions toC6H5Na3O7), the effects of synthetic conditions on the properties of films were investigated. On the basis of experimental results, the synthetic conditions were optimized. The crystallinity and orientation of films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Using the optical absorption data, the optical band gap for theMnSfilms was determined to be 3.23 eV.

Keywords: Manganese sulfide; chemical bath deposition; thin film (search for similar items in EconPapers)
Date: 2004
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DOI: 10.1142/S0218625X04005895

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