GROWTH AND CHARACTERIZATION OF SILICON CARBIDE NANOWIRES

Byoungtae Park, Yonghwan Ryu and Kijung Yong ()
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Byoungtae Park: Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang, University of Science and Technology (POSTECH), Pohang 790-784, Korea
Yonghwan Ryu: Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang, University of Science and Technology (POSTECH), Pohang 790-784, Korea
Kijung Yong: Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang, University of Science and Technology (POSTECH), Pohang 790-784, Korea

Surface Review and Letters (SRL), 2004, vol. 11, issue 04n05, 373-378

Abstract: A simple, direct synthesis method was used to grow the core-shellSiC-SiOxnanowires by heating theNiOcatalyzed silicon substrate. The carbothermal reduction of WO3by C provided a reductive environment to synthesize the crystallineSiCnanowires covered with theSiOxsheath in the growth temperature of 1000–1100°C. After hydrofluoric acid (HF) etching, the cubicβ-SiCnanowires were extracted from the core-shell nanowires in large quantities. A solid-liquid-solid (SLS) mechanism was proposed for the growth of the core-shellSiC-SiOxnanowires.

Keywords: Low dimensional structures; nanowires; growth models; SiC (search for similar items in EconPapers)
Date: 2004
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DOI: 10.1142/S0218625X04006311

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