CONTRIBUTION OF THE MORPHOLOGICAL GRAIN SIZES TO THE ELECTRICAL RESISTIVITY OF PLATINUM AND GOLD THIN FILMS

M. Cattani () and M. C. Salvadori
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M. Cattani: Instituto de Física, Universidade de São Paulo, C. P. 66318, CEP 05315-970, São Paulo, SP, Brazil
M. C. Salvadori: Instituto de Física, Universidade de São Paulo, C. P. 66318, CEP 05315-970, São Paulo, SP, Brazil

Surface Review and Letters (SRL), 2004, vol. 11, issue 04n05, 463-467

Abstract: We have measured the morphological grain sizes of nanostructured platinum and gold thin films. In previous works their electrical resistivities have been measured and a theoretical approach was proposed to explain the resistivity experimental data. It will be shown that within the framework of our theoretical approach, the morphological grain sizes play an essential role in the electrical resistivity of these metallic thin films.

Keywords: Metallic thin films; electrical resistivity; morphological grain sizes (search for similar items in EconPapers)
Date: 2004
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DOI: 10.1142/S0218625X04006396

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