BAND GAP SHIFT DUE TO NITROGEN DOPING, COMPOSITION GAS PRESSURE AND MICROWAVE POWER OFa-C:NTHIN FILMS GROWN BY NEWLY-DEVELOPED SURFACE WAVE MICROWAVE PLASMA CVD

M. Rusop (), S. Adhikari, A. M. M. Omer, S. Adhikary, H. Uchida, T. Soga, T. Jimbo and M. Umeno
Additional contact information
M. Rusop: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
S. Adhikari: Department of Electrical Engineering, Graduate School of Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan
A. M. M. Omer: Department of Electrical Engineering, Graduate School of Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan
S. Adhikary: Department of Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan
H. Uchida: Department of Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan
T. Soga: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
T. Jimbo: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
M. Umeno: Department of Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan

Surface Review and Letters (SRL), 2004, vol. 11, issue 06, 559-562

Abstract: This paper reports the band gap shifting due to nitrogen(N2)doping, microwave power and composition gas pressure of nitrogenated amorphous carbon(a-C:N)thin films deposited by newly-developed surface wave microwave plasma chemical vapor deposition (SWMP-CVD). Results show that the optical band gap decreased from 4.1 eV to 2.4 eV corresponding to the increase ofN2doping from 0 to 5% in the gas ratio. However, further increase ofN2doping beyond 5% did not decrease the band gap. It was found that composition gas pressure and launched MW power during film deposition also largely control the optical band gap. Investigation of annealing effects on optical band gap and film thickness of theN2doped films revealed that both band gap and film thickness decrease significantly with increase of annealing temperature. The optical band gap decreased from 2.4 eV to 1.1 eV, while film thickness decreases from 320 nm to 50 nm corresponding to 200 to 400°C annealing temperature. The results revealed that the properties ofa-C:Ncan be tuned by changing the annealing temperature, composition gas pressure and microwave power of the SWMP-CVD system.

Keywords: Optical band gap; nitrogenated amorphous carbon; annealing temperature; composition gas pressure; microwave power (search for similar items in EconPapers)
Date: 2004
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X04006529
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:11:y:2004:i:06:n:s0218625x04006529

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X04006529

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().