COPPER IODIDE THIN FILMS AS Ap-TYPE ELECTRICAL CONDUCTIVITY IN DYE-SENSITIZEDp-CuI|Dye|n-TiO2HETEROJUNCTION SOLID STATE SOLAR CELLS

M. Rusop (), T. Soga, T. Jimbo and M. Umeno
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M. Rusop: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan
T. Soga: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan
T. Jimbo: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan
M. Umeno: Department of Electronic Engineering, Faculty of Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan

Surface Review and Letters (SRL), 2004, vol. 11, issue 06, 577-583

Abstract: The transparent semiconducting copper iodide(CuI)films were deposited by pulsed laser deposition (PLD) and their structural and optoelectrical properties in the power output ofTiO2|Dye|CuIcells are reported. TheseCuIfilms exhibited optical transmittance of over 80% in the wavelength range from 400 to 900 nm and a minimum resistivity of about 2 KΩ-cm. An efficient charge generation is observed through the illumination of theTiO2layer of the fabricatedp-CuI|Dye|n-TiO2cells. The cells performances have been given in the current–voltage (I–V) working curve under illumination when exposed to AM 1.5 illumination condition (100mW/cm2, 25°C). The maximum short circuit photo current density(Jsc)of about12.2mA/cm2and open circuit photo voltage(Voc)of about 480 mV were obtained for theTiO2|Dye|CuIcells with good reproducibility. The fill factor(FF)and power conversion efficiency (η) were about 47.8% and 2.8%, respectively.

Keywords: CuI; TiO2; PLD; heterojunction; dye-sensitized; solid state solar cell (search for similar items in EconPapers)
Date: 2004
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DOI: 10.1142/S0218625X04006554

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