LOW-TEMPERATURE GROWTH AND PHOTOLUMINESCENCE OFSiCNNANOPARTICLE FILM BY CONSECUTIVE RF MAGNETRON SPUTTERING

M. Xu, V. M. Ng, S. Y. Huang and S. Y. Xu
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M. Xu: Plasma Sources and Applications Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore
V. M. Ng: Plasma Sources and Applications Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore
S. Y. Huang: Plasma Sources and Applications Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore
S. Y. Xu: Plasma Sources and Applications Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore

Surface Review and Letters (SRL), 2004, vol. 11, issue 06, 515-519

Abstract: Low-temperature growth ofSiCNnanoparticle films on anAlNbuffer layer onSi(100)by consecutive RF magnetron sputtering is reported. The visible photoluminescence (PL) is observed between 620 and 670 nm using a single photo excitation at 514.5 nm. The growth of film at room temperature is found to yield the strongest PL intensity, whereas the film grown at 200°C corresponds to the lowest PL intensity. A similar variation ofSiCdiffraction intensity is also observed in XRD spectra. The photoluminescence of theSiCNfilm is discussed on the base of the morphological, structural and elemental analyse.

Keywords: SiCN; low-temperature growth; RF magnetron sputtering; photoluminescence; 71.23.Cq; 78.20.Ci; 81.40.E (search for similar items in EconPapers)
Date: 2004
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DOI: 10.1142/S0218625X04006566

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