EFFECTS OF METHANE GAS FLOW RATE ON THE OPTOELECTRICAL PROPERTIES OF NITROGENATED CARBON THIN FILMS GROWN BY SURFACE WAVE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

M. Rusop (), S. Abdullah, A. M. M. Omer, S. Adhikari, T. Soga, T. Jimbo and M. Umeno
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M. Rusop: Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam 40450, Selangor, Malaysia
S. Abdullah: Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam 40450, Selangor, Malaysia
A. M. M. Omer: Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan
S. Adhikari: Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan
T. Soga: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
T. Jimbo: Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
M. Umeno: Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan

Surface Review and Letters (SRL), 2006, vol. 13, issue 05, 585-592

Abstract: We have studied the influence of the methane gas(CH4)flow rate on the composition and structural and electrical properties of nitrogenated amorphous carbon(a-C:N)films grown by surface wave microwave plasma chemical vapor deposition (SWMP-CVD) using Auger electron spectroscopy, X-ray photoelectron spectroscopy, UV-visible spectroscopy, four-point probe and two-probe method resistance measurement. The photoelectrical properties ofa-C:Nfilms were also studied. We have succeeded to growa-C:Nfilms using a novel method of SWMP-CVD at room temperature and found that the deposition rate, bonding and optical and electrical properties ofa-C:Nfilms are strongly dependent on theCH4gas sources, and thea-C:Nfilms grown at higherCH4gas flow rate have relatively high electrical conductivity for both cases of in dark and under illumination condition.

Keywords: Surface wave; microwave; methane; gas flow rate; amorphous carbon nitride; a-C:N (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1142/S0218625X06008530

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