PHASE TRANSFORMATION ANDR–TCHARACTERISTICS OF VACUUM ANNEALED VANADIUM OXIDE THIN FILMS

Y. L. Wang, M. C. Li () and L. C. Zhao
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Y. L. Wang: School of Material Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
M. C. Li: School of Material Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
L. C. Zhao: School of Material Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China

Surface Review and Letters (SRL), 2008, vol. 15, issue 01n02, 59-64

Abstract: Polycrystalline vanadium oxide(VOx)thin films with mixed phases ofV6O13+VO2(M) are deposited onto p-dopedSi(100) substrates at 430°C using magnetron sputtering. By vacuum annealing on as-depositedVOxthin films at 450°C, at different annealing times we obtained nanoscale polycrystallineVOxthin films with two or more mixed phases. With the annealing time increasing, the phases of the films underwent the following transformation:V6O13+VO2(M) →VO2(M) +VO2(B) →VO2(B) +VO2(M) +V5O9→V4O7+V5O9. The surface ofVOxthin films prepared in different conditions is of high quality with mean grain size ranging from 80 to 300 nm and theRabeing about 20nm. The lowest temperature coefficient of resistance at ambient temperature (20°C) of -2% K-1is found in theVOxthin film annealed at 450°C for 8 h with mixed phases ofVO2(M) +VO2(B), which can meet the needs of microbolometer materials.

Keywords: Vanadium oxide; phase; vacuum annealing; temperature coefficient of resistance (TCR) (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1142/S0218625X08010956

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