HIGH POTENTIAL GRADIENT OFY2O3-DOPED THICK FILM VARISTORS

L. Ke, D. M. Jiang and X. M. Ma ()
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L. Ke: State Key Laboratory of Precision Spectroscopy, Department of Physics, East China Normal University, Shanghai 200062, P. R. China
D. M. Jiang: State Key Laboratory of Precision Spectroscopy, Department of Physics, East China Normal University, Shanghai 200062, P. R. China
X. M. Ma: State Key Laboratory of Precision Spectroscopy, Department of Physics, East China Normal University, Shanghai 200062, P. R. China

Surface Review and Letters (SRL), 2009, vol. 16, issue 03, 387-391

Abstract: The electrical and microstructural properties of a series ofZnO-based thick film varistors (TFVs) doped with 0.00, 0.02, 0.04, 0.06, 0.08, and 0.10 mol%Y2O3were studied. It was found that sample doped with 0.08 mol%Y2O3showed the highest potential gradient of 3159.4 V/mm with a leakage current of 36.4 μA and a nonlinear exponent of 13.1. TheZnOgrain size decreased with increasingY2O3content, which was the origin for the increase in potential gradient. Raman spectra results showed that the tensile stress increased linearly withY2O3doping. Larger tensile stress was considered to result from the lattice distortion and inevitably influenced the grain boundary characteristics. While theY2O3doping concentration was beyond 0.08 mol%, the effect of residual stress on electrical properties was much more remarkable than that of grain size, leading potential gradient to be weakened. As a result, high potential gradient ofZnO-based TFVs could be obtained withY2O3doping concentration of 0.08 mol% and qualified as excellent candidates for high voltage varistor application.

Keywords: Thick film varistors; potential gradient; Y2O3; residual stress (search for similar items in EconPapers)
Date: 2009
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DOI: 10.1142/S0218625X09012767

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