DIELECTRIC AND INTERFACE STABILITY OFLaSmO3FILMS

Weitao Su (), Qiuhui Zhuang, Dexuan Huo and Bin Li
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Weitao Su: School of Science, Hunan University of Technology, Zhuzhou 412007, China;
Qiuhui Zhuang: Institute of Electronic Information and Automation, Chongqing University of Technology, Chongqing 400050, China
Dexuan Huo: Institute of Material Physics, Hangzhou Dianzi University, Hangzhou 310018, China
Bin Li: Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 20083, China

Surface Review and Letters (SRL), 2012, vol. 19, issue 06, 1-8

Abstract: The continuous downscaling of metal oxide semiconductor field effect transistors (MOSFET) on silicon, germanium,GaAs, etc. still demands the creation of new high-kdielectrics with even better material performance. In this research, a new ternary high-kdielectric film,LaSmO3, is deposited using electron-beam evaporation. The structure and high temperature interfacial thermal stabilities are investigated by X-ray diffraction (XRD), X-ray photon electronic spectra (XPS), infrared attenuated total reflection (ATR) and time of flight second ion mass spectroscopy (ToF-SIMS). The band gap and band offset are determined using the O1senergy loss spectra and valence band difference between film and substrate, respectively, from the XPS spectra. Capacitance-voltage (CV) and current-voltage (IV) curves are measured to give an insight of the dielectric and leakage current of this material. It is found that crystallization temperature ofLaSmO3is >1000°C. The high dielectric constant(k) = 24.6, large band gap(Eg) > 7eV and low leakage current (1.8 × 10-4A/cm2, 1 MV/cm) makeLaSmO3to be a promising high-kcandidate.

Keywords: LaSmO3; high-kdielectrics; rare earth oxide (search for similar items in EconPapers)
Date: 2012
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DOI: 10.1142/S0218625X12500643

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