INFLUENCE OF WAVEGUIDE LAYERS ON DEEP VIOLETInGaNDQW LASERS PERFORMANCE

Gh. Alahyarizadeh (), M. Amirhoseiny () and Z. Hassan ()
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Gh. Alahyarizadeh: Engineering Department, Shahid Beheshti University, G.C., P.O. Box 1983969411, Tehran, Iran
M. Amirhoseiny: Buein Zahra Technical University, Buein Zahra, Qazvin, Iran;
Z. Hassan: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, University Science USM, Malaysia, 11800-Penang, Malaysia

Surface Review and Letters (SRL), 2015, vol. 22, issue 04, 1-7

Abstract: This paper focuses on the performance characteristics of laser diodes (LDs) to improve output light emission properties. The optical and electrical properties such as threshold current, output power, slope efficiency, differential quantum efficiency, optical intensity and optical confinement factor has been compared for diode lasers with different waveguide structures. The waveguide structures which were analyzed in this research were a basicGaNwaveguide structure, anInGaNwaveguide structure, andAlInGaNwaveguide structure. In addition the effects of Indium concentration and the thickness of the top and down waveguide layers have been studied. TheInGaNwaveguide layer, which has a higher concentration of Indium, appears to increase the OCF. The increased thickness of theGaNlayer improves light emission. However, laser performance deteriorates with increasing thickness of waveguide layers more than 100 nm. Over all, LD withAlInGaNwaveguide structure has highest OCF, slope efficiency and DQE.

Keywords: InGaN; DQW laser diode; quantum well; waveguide; numerical simulation (search for similar items in EconPapers)
Date: 2015
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DOI: 10.1142/S0218625X15500511

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