THE EFFECTS OF BORON DOPING ON RESIDUAL STRESS OF HFCVD DIAMOND FILM FOR MEMS APPLICATIONS

Tianqi Zhao (), Xinchang Wang () and Fanghong Sun ()
Additional contact information
Tianqi Zhao: School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
Xinchang Wang: School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
Fanghong Sun: School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China

Surface Review and Letters (SRL), 2018, vol. 25, issue 01, 1-8

Abstract: In this study, the residual stress of boron-doped diamond (BDD) films is investigated as a function of boron doping level using X-ray diffraction (XRD) analysis. Boron doping level is controlled from 1000ppm to 9000ppm by dissolving trimethyl borate into acetone. BDD films are deposited on silicon wafers using a bias-enhanced hot filament chemical vapor deposition (BE-HFCVD) system. Residual stress calculated by sin2 ψ method varies linearly from −2.4GPa to −1.1GPa with increasing boron doping level. On the BDD film of −1.75GPa, free standing BDD cantilevers are fabricated by photolithography and ICP-RIE processes, then tested by laser Doppler vibrometer (LDV). A cantilever with resonant frequency of 183KHz and Q factor of 261 in the air is fabricated.

Keywords: HFCVD diamond film; boron-doping; residual stress; ICP-RIE; cantilever; MEMs; laser dopler vibrometer (search for similar items in EconPapers)
Date: 2018
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X18500397
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:25:y:2018:i:01:n:s0218625x18500397

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X18500397

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().