AMORPHOUS VANADIUM DIOXIDE: THE RESIST FOR ELECTRON-BEAM LITHOGRAPHY

Genrikh Stefanovich, Andrey Velichko, Alexander Pergament and Peter Boriskov
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Genrikh Stefanovich: Institute of Physics and Technology, Petrozavodsk State University, Petrozavodsk 185910, Russia
Andrey Velichko: Institute of Physics and Technology, Petrozavodsk State University, Petrozavodsk 185910, Russia
Alexander Pergament: Institute of Physics and Technology, Petrozavodsk State University, Petrozavodsk 185910, Russia
Peter Boriskov: Institute of Physics and Technology, Petrozavodsk State University, Petrozavodsk 185910, Russia

Surface Review and Letters (SRL), 2018, vol. 25, issue 06, 1-28

Abstract: Amorphous vanadium dioxide, in combination with the resist properties, allowing one to create nanoscale structures, and with the effects of electrical switching and memory, should be in demand by the electronic industry. The opportunity to prepare highly sensitive to electron beam, optical and ion irradiation oxide films of vanadium by vacuum methods allows hope for simplified methods for coating and developing resists based on vanadium oxides. The scope of this review article is indicated by its title, namely, it encompasses the authors’ experimental results and model approximations on electron-beam modification of vanadium dioxide thin films and application of these films as inorganic nanolithography resists. These findings have been earlier published in a number of scattered original papers, and here we unite them all in one detailed review supplementing with new, previously unpublished data.

Keywords: Vanadium dioxide; electron-beam modification; nanolithography resist (search for similar items in EconPapers)
Date: 2018
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DOI: 10.1142/S0218625X18501184

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