INFLUENCE OF PROCESS PARAMETERS ON OPTICAL AND PHYSICAL PROPERTIES OF ITO THIN FILM

Arezoo Moshabaki, Erfan Kadivar and Alireza Firoozifar
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Arezoo Moshabaki: Department of Physics, Shiraz University of Technology, Shiraz, 71555-313, Iran
Erfan Kadivar: Department of Physics, Shiraz University of Technology, Shiraz, 71555-313, Iran
Alireza Firoozifar: Department of Physics, College of Sciences, University of Isfahan, Isfahan, Iran

Surface Review and Letters (SRL), 2020, vol. 27, issue 07, 1-10

Abstract: Indium tin oxide (ITO) thin films have been deposited on glass substrate by DC magnetron sputtering in the presence and absence of oxygen gas flux. Subsequently, some of the samples have been annealed in vacuum or air oven at 350∘C for 20min. The optical, surface morphology and electrical characteristics have been examined by spectrophotometry, atomic force microscope, field emission scanning electron microscopy, four-point probe and Hall effect measurements as a function of argon gas flux, film thickness, deposition rate and substrate temperature. Experimental results indicate that the surface roughness increases by decreasing the argon gas flow rate and deposition rate. The result revealed that the lowest surface roughness of 1.07nm is achieved at zero oxygen gas flux, argon gas flow 20sccm and deposition rate 0.5 Å/s. We have found that the maximum value of merit figure is related to the argon gas flow rate 30sccm. In order to obtain a very smooth surface, finally, the ITO thin films have been processed with alumina polishing solution by ultrasonic method. Our experimental results indicate that surface roughness decreases and merit figure increases after polishing process.

Keywords: Indium tin oxide (ITO); merit figure; surface roughness; alumina polishing solution (search for similar items in EconPapers)
Date: 2020
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DOI: 10.1142/S0218625X1950183X

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