CHEMICAL MECHANICAL POLISHING AND ITS MECHANISM ON YTTERBIUM-DOPED MIXED SESQUIOXIDES (Yb:LuScO3)

Yuanyuan Fang, Hongbo He, Lunzhe Wu, Zhe Wang, Aihuan Dun and Long Zhang
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Yuanyuan Fang: Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, P. R. China†University of Chinese Academy of Sciences, 100049 Beijing, P. R. China
Hongbo He: Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, P. R. China
Lunzhe Wu: Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, P. R. China
Zhe Wang: Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, P. R. China†University of Chinese Academy of Sciences, 100049 Beijing, P. R. China
Aihuan Dun: Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, P. R. China
Long Zhang: Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, P. R. China

Surface Review and Letters (SRL), 2021, vol. 28, issue 01, 1-11

Abstract: In this paper, Yb:LuScO3 crystal was processed by chemical mechanical polishing (CMP), and the surface roughness of 0.18nm was obtained. The atomic step structures of these sesquioxide crystals are successfully characterized by AFM scanning probe technology. Through several CMP experiments, the basic material removal mechanism of a ytterbium-doped LuScO3 crystal during CMP is studied. Based on the findings, a material removal model is established. The results of this study provide ideas for the study of CMP, crystal growth and epitaxy.

Keywords: Ultra smooth surface; sesquioxide crystal; chemical mechanical polishing; atomic step structures; material removal mechanism (search for similar items in EconPapers)
Date: 2021
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DOI: 10.1142/S0218625X20500365

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