EconPapers    
Economics at your fingertips  
 

DETERMINATION OF MAIN ELECTRICAL PARAMETERS OF Au–4H-n-SiC (MS) AND Au–Al2O3–4H-n-SiC (MIS) DEVICES

Gülçi̇n Ersöz Demi̇r and İbrahi̇m Yücedağ
Additional contact information
Gülçi̇n Ersöz Demi̇r: Department of Management Information Systems, Beyşehir A.A. Faculty of Business, Selçuk University, Konya 42700, Turkey
İbrahi̇m Yücedağ: #x2020;Department of Computer Engineering, Engineering Faculty, Düzce University, Düzce 81620, Turkey

Surface Review and Letters (SRL), 2021, vol. 28, issue 05, 1-10

Abstract: In this study, Au–4H-n-SiC metal–semiconductor (MS) and Au–Al2O3–4H-n-SiC metal–insulator–semiconductor (MIS) devices were fabricated to examine the effects on the performance of electronic devices of interfacial insulating materials. In order to determine the dielectric properties, capacitance/conductance–voltage (C/G–V) measurements were realized in a wide range of voltages (−3.0 V)–(11.0 V). Current–voltage (I–V) measurements to obtain the electric properties were realized at ±2.5V. Moreover, both the energy distributions of surface states (Nss) and series resistance (Rs) were obtained from the C/G–V data. Obtained results provided that series resistance originating from interfacial layer (Al2O3) was more effective on the I–V and C/G–V characteristics which must be taken into account in the calculation of main electrical parameters. The rectification ratio (RR) and shunt resistance (Rsh) of the MIS device were almost 103 times greater than those of the MS structure. Using Al2O3 between Au and 4H-n-SiC also led to an increase in the value of barrier height (BH) and a decrease in the value of ideality factor (n). These results confirmed that Al2O3 layer leads to an increase in the performance of MS device with respect to low values of Nss, reverse saturation current (I0) and n and high values of RR, Rsh and BH.

Keywords: Al2O3 interfacial insulator layer; comparison of MS and MIS devices; voltage and frequency dependence of surface states and series resistance (Rs) (search for similar items in EconPapers)
Date: 2021
References: Add references at CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X21500360
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:28:y:2021:i:05:n:s0218625x21500360

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X21500360

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().

 
Page updated 2025-03-20
Handle: RePEc:wsi:srlxxx:v:28:y:2021:i:05:n:s0218625x21500360