A NOVEL pH SENSITIVITY OF SnO2 THIN FILM BASED EGFET PREPARED USING CHEMICAL BATH METHOD

Imad H. Kadhim and N. M. Abd-Alghafour
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Imad H. Kadhim: Ministry of Education, Baghdad, Iraq
N. M. Abd-Alghafour: #x2020;Ministry of Education, Al-Anbar, Iraq‡Biophysics Department, College of Applied Sciences, University of Anbar, Iraq

Surface Review and Letters (SRL), 2021, vol. 28, issue 09, 1-7

Abstract: Nanocrystalline (NC) tin dioxide (SnO2) thin film has been prepared using chemical bath method at low working temperature onto SiO2/Si substrates. The structural and morphological properties were studied through X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The as-deposited thin film appeared with tetragonal rutile structure. The crystallization of SnO2 film was achieved when the film was exposed to anneal at 500∘C. NC SnO2 thin film was successfully utilized as an extended gate field-effect transistor (EGFET) pH sensing. NC SnO2 film based pH-EGFET sensor displayed a notable pH sensing performance, where the sensitivity and the linearity values are equal to 25.7 (mV/pH) and 0.8489 within 2–12 range consecutive. The NC SnO2 thin film sensor has shown good pH sensor stability and reliability; thus it can be considered the best choice for flexible and disposable biosensors.

Keywords: SnO2; tetragonal rutile structure; EGFET; pH sensitivity (search for similar items in EconPapers)
Date: 2021
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DOI: 10.1142/S0218625X21500748

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