SEMICONDUCTIVE PROPERTIES OF In2O3 ADDED SIC THIN FILMS

Chia-Te Liao (), Hsin-Pei Lin (), En-Chi Tzou (), Chia-Yang Kao () and Cheng-Fu Yang
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Chia-Te Liao: Department of Aviation Communication and Electronics, Air Force Institute of Technology, Kaohsiung 820, Taiwan
Hsin-Pei Lin: ��Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
En-Chi Tzou: ��Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
Chia-Yang Kao: ��Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
Cheng-Fu Yang: ��Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan‡Department of Aeronautical Engineering, Chaoyang University of Technology, Taichung 413, Taiwan

Surface Review and Letters (SRL), 2025, vol. 32, issue 07, 1-5

Abstract: SiC is a crucial material for third-generation semiconductors due to its ultra-wide bandgap. However, its high melting point and hardness make direct deposition challenging, and doping with impurities to create n-type semiconductor thin films is even more difficult. This study focused on doping SiC powder with In2O3 to achieve an In concentration of 6.5 at% and create n-type thin films. The In-doped SiC powder was heated to 500∘C to create a target, which was then used with electron beam (e-beam) technology to deposit thin films of In-doped SiC with a thickness of approximately 202nm. Key advancements included using various tools to analyze the physical and electrical properties of these thin films. Hall effect measurements assessed mobility, resistivity, and carrier concentration, confirming their n-type semiconductor nature. The Tauc plot method was used to determine the bandgap values of both pure and In-doped SiC thin films. Additionally, a semiconductor parameter analyzer measured the conductivity and I-V characteristics of the devices. X-ray photoelectron spectroscopy and Gaussian-resolved spectra further confirmed a strong correlation between conductivity and the concentration of oxygen vacancies.

Keywords: In2O3; SiC; X-ray photoelectron spectroscopy; Gaussian-resolved spectra (search for similar items in EconPapers)
Date: 2025
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DOI: 10.1142/S0218625X25400086

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