Experimental performance comparison of 0.72 eV-GaSb and 0.59 eV-InGaAs thermophotovoltaic cells under different radiation temperatures

Yonghui Liu, Liangliang Tang, Jianxiong Shao, Yili Tang, Jiapeng Li, Xiaoyu Lv and Yuan Yuan

Applied Energy, 2024, vol. 361, issue C, No S0306261924003428

Abstract: The field of Thermophotovoltaic (TPV) has recently exhibited highly promising characteristics. The performance of thermophotovoltaic (TPV) cells with 0.72 eV-GaSb and 0.59 eV-InGaAs varies at different radiation temperatures, as demonstrated in this experimental study. The research evaluates and compares the TPV cell performance under radiation temperatures ranging from 800 to 1200 °C, and analyses the impact of temperature on critical parameters. The maximum efficiencies achieved for GaSb and InGaAs cells were 23.10% and 28.91%, respectively, under tungsten radiation spectrum at a temperature of 1200 °C. This comprehensive analysis provides valuable insights into optimizing TPV systems for efficient thermal-to-electrical energy conversion using GaSb and InGaAs cells.

Keywords: GaSb; InGaAs; Radiation temperature; Cell performance (search for similar items in EconPapers)
Date: 2024
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DOI: 10.1016/j.apenergy.2024.122959

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