Temperature effect on the electrical and optical properties of indium-selenide thin-films

S. S. Sen, N. N. Biswas and K. A. Khan

Applied Energy, 2000, vol. 65, issue 1-4, 58 pages

Abstract: Indium-Selenide thin-films have been prepared by the thermal-evaporation technique at a pressure of 4.5x10-6 torr and a temperature of 673-873 K. For both the as-deposited and annealed films, (i) the electrical conductivity increased with increasing temperature and (ii) the variation of activation energy follows the island structure theory. The temperature co-efficient of resistance (T.C.R.) and Hall-effect measurements indicate that the sample is a n-type carrier. The optical spectra for both types of films were obtained in the wavelength range 0.3

Keywords: Indium; selenide; Electrical; conductivity; As-deposited; Annealed; Temperature; Integrated; transmittance; Selective; surface (search for similar items in EconPapers)
Date: 2000
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