Electron mobility in heavily doped, hot pressed silicon germanium alloys

D. M. Rowe

Applied Energy, 1980, vol. 6, issue 6, 455-462

Abstract: A procedure for obtaining the absolute partial mobilities of electrons in heavily doped, hot pressed, silicon germanium alloys, currently employed in thermoelectric applications, is described. Electrical measurements on a specimen of Si0Ge30 alloy are reported and the data are analysed in a self-consistent manner. Comparing the derived mobilities with specific scattering models enables an estimate to be made of the reduction in carrier mobility associated with the method of preparation of the alloys.

Date: 1980
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