A novel method to achieve selective emitter for silicon solar cell using low cost pattern-able a-Si thin films as the semi-transparent phosphorus diffusion barrier

Da Ming Chen, Zong Cun Liang, Lin Zhuang, Yang Huan Lin and Hui Shen

Applied Energy, 2012, vol. 92, issue C, 315-321

Abstract: Selective emitter for silicon solar cell was realized by employing a-Si thin films as the semi-transparent diffusion barrier. The a-Si thin films with various thicknesses (∼10–40nm) were deposited by the electron-beam evaporation technique. Emitters with sheet resistances from 37 to 145Ω/□ were obtained via POCl3 diffusion process. The thickness of the a-Si diffusion barrier was optimized to be 15nm for selective emitter in our work. Homemade mask which can dissolve in ethanol was screen-printed on a-Si film to make pattern. The a-Si film was then patterned in KOH solution to form finger-like design. Selective emitter was obtainable with one-step diffusion with patterned a-Si film on. Combinations of sheet resistances for the high-/low-level doped regions of 39.8/112.1, 36.2/88.8, 35.4/73.9 were obtained. These combinations are suitable for screen-printed solar cells. This preparation method of selective emitter based on a-Si diffusion barrier is a promising approach for low cost industrial manufacturing.

Keywords: Silicon solar cell; Selective emitter; a-Si thin film; Sheet resistance (search for similar items in EconPapers)
Date: 2012
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Citations: View citations in EconPapers (2)

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DOI: 10.1016/j.apenergy.2011.10.033

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