Simulation of memristor switching time series in response to spike-like signal

D. Zhevnenko, F. Meshchaninov, V. Kozhevnikov, E. Shamin, A. Belov, S. Gerasimova, D. Guseinov, A. Mikhaylov and E. Gornev

Chaos, Solitons & Fractals, 2021, vol. 142, issue C

Abstract: Memristor based device development is among the most promising and fast developing branches of modern microelectronics. Therefore, memristor modeling remains an important task due to constant improvement in understanding of resistive switching mechanism. We present a compact model with the features of modified mobility included as well as a method of switching series approximation. In addition, the method was applied to an experimental set of switching cycles of the ZrO2(Y)-based device. The obtained results include the extraction of model parameters for each I-V curve, the result of statistical processing of the parameters cycle-to-cycle variations, the estimation of the dynamic attractors, analysis of the region of the state variable of the model, and estimation of switching power consumption.

Keywords: Memristors; Compact model; Yttria‐stabilized zirconium dioxide; Fitzhugh-Nagumo signal; Switching series; Inhomogeneities (search for similar items in EconPapers)
Date: 2021
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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Persistent link: https://EconPapers.repec.org/RePEc:eee:chsofr:v:142:y:2021:i:c:s0960077920307761

DOI: 10.1016/j.chaos.2020.110382

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