Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure

A.A. Gismatulin, Oleg M. Orlov, V.A. Gritsenko and G.Ya. Krasnikov

Chaos, Solitons & Fractals, 2021, vol. 142, issue C

Abstract: Metal-nitride-oxide-silicon structures that exhibit memristor properties were obtained using the low-pressure chemical vapor deposition at 700° C. The fabricated metal-nitride-oxide-silicon memristor structure does not require a forming procedure. In addition, the metal-nitride-oxide-silicon memristor has a memory window of about 3 orders of magnitude. In our work, the charge transport of high and low resistive states in a metal-nitride-oxide-silicon memristor is analyzed with two contact-limited models and six bulk-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling model, Frenkel model of Coulomb traps ionization, Hill-Adachi model of overlapping Coulomb traps, Shklovskii-Efros percolation model, Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of metal-nitride-oxide-silicon memristor. We found that the main charge transport mechanism in the metal-nitride-oxide-silicon memristor in a high resistive state is the model of space-charge-limited current with traps. In a low resistive state, the charge transport mechanism is described by the space-charge-limited current model with filled traps.

Keywords: Memristor; Charge transport; Endurance; Space-charge-limited current (search for similar items in EconPapers)
Date: 2021
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Persistent link: https://EconPapers.repec.org/RePEc:eee:chsofr:v:142:y:2021:i:c:s096007792030850x

DOI: 10.1016/j.chaos.2020.110458

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