Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor

D.O. Filatov, M.N. Koryazhkina, A.S. Novikov, V.A. Shishmakova, M.E. Shenina, I.N. Antonov, O.N. Gorshkov, N.V. Agudov, A. Carollo, D. Valenti and B. Spagnolo

Chaos, Solitons & Fractals, 2022, vol. 156, issue C

Abstract: The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.

Keywords: Resistive switching; Memristor; Yttria stabilized zirconia; Metastability; Noise induced stabilization; Beneficiary role of noise (search for similar items in EconPapers)
Date: 2022
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Citations: View citations in EconPapers (3)

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Persistent link: https://EconPapers.repec.org/RePEc:eee:chsofr:v:156:y:2022:i:c:s0960077922000212

DOI: 10.1016/j.chaos.2022.111810

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