Infrared radiative properties of anodized aluminium

V.C. Sharma and A. Sharma
Authors registered in the RePEc Author Service: Anand Sharma

Energy, 1983, vol. 8, issue 10, 757-762

Abstract: Measurements of anodic film thicknesses and their total hemispherical thermal emittance for various current densities (0.55–3.85 ampere/dm2), anodizing times (1–20 min), and oxalic acid concentrations (1–6 wt.%) show a linear relationship between the film thickness and the total hemispherical thermal emittance (ϵ). Changes in oxalic acid concentration (2–4 wt.%) have no significant effect on the film growth-rate and the rate at which ϵ increases with increasing anodizing time. Measurements of ϵ for wavelengths form 3 to 30 μm show that the film growth-rate has a marked effect on the i.r. radiative properties of aluminium.

Date: 1983
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Persistent link: https://EconPapers.repec.org/RePEc:eee:energy:v:8:y:1983:i:10:p:757-762

DOI: 10.1016/0360-5442(83)90049-X

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