A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines

M.J. Ibáñez, J.B. Roldán, A.M. Roldán and R. Yáñez

Mathematics and Computers in Simulation (MATCOM), 2014, vol. 102, issue C, 1-10

Abstract: In this work we propose a method to obtain the MOSFET transistor threshold voltage, which is known to be an essential magnitude from the modeling viewpoint. Generally, there are a large number N of experimental data, and the use of smoothing splines leads to resolution of linear systems of size N+d, where d depends on the degree of the splines used. The computational effort could be reduced by decomposing the original problem into subproblems and using an appropriate method to combine the corresponding solutions. We adopt this idea, considering for simplicity the decomposition into two subsets and using a boolean sum based method for combining the intermediate spline approximants.

Keywords: MOSFET; Threshold voltage; Parameter extraction; Smoothing spline; Boolean sum (search for similar items in EconPapers)
Date: 2014
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
http://www.sciencedirect.com/science/article/pii/S0378475413002085
Full text for ScienceDirect subscribers only

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:eee:matcom:v:102:y:2014:i:c:p:1-10

DOI: 10.1016/j.matcom.2013.04.024

Access Statistics for this article

Mathematics and Computers in Simulation (MATCOM) is currently edited by Robert Beauwens

More articles in Mathematics and Computers in Simulation (MATCOM) from Elsevier
Bibliographic data for series maintained by Catherine Liu ().