 An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistorsP. González, M.J. Ibáñez, A.M. Roldán and J.B. Roldán Mathematics and Computers in Simulation (MATCOM), 2015, vol. 118, issue C, 248-257 Abstract: WENO-based techniques, along with some particular polynomial interpolation procedures, have been employed to improve parameter extraction in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), in particular for the determination of the threshold voltage. The limitations detected in conventional numerical methods to calculate derivatives of experimental data are overcome with this new application of WENO-based techniques. The numerical noise that comes up in the experimental and simulated data usually employed to characterize MOSFETs transistors is strongly reduced. The need for an accurate determination of the threshold voltage motivates the use of this advanced numerical approach that solves many of the issues that affect the conventional parameter extraction procedures currently in use in the microelectronics industry. In addition, also the influence of DIBL effects on the threshold voltage in short channel MOSFETs has been analyzed with this smart weighted ENO procedure. Keywords: MOSFETs; Threshold voltage extraction; DIBL effects; WENO procedure (search for similar items in EconPapers) Downloads: (external link) Related works: Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text Persistent link: https://EconPapers.repec.org/RePEc:eee:matcom:v:118:y:2015:i:c:p:248-257 DOI: 10.1016/j.matcom.2014.11.018 Access Statistics for this article Mathematics and Computers in Simulation (MATCOM) is currently edited by Robert Beauwens More articles in Mathematics and Computers in Simulation (MATCOM) from Elsevier |
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