Computer simulation of the temperature and electromagnetic field in an inductively heated semiconductor

Gábor Renner

Mathematics and Computers in Simulation (MATCOM), 1978, vol. 20, issue 1, 28-36

Abstract: The electromagnetic and temperature fields in an inductively heated semiconductor interact with each other in a sophisticated way through the heat dependence of the material parameters and the heat source density determined by the eddy currents. The paper deals with a computer analysis of the interacting fields taking into account the nonlinear temperature dependence of the material parameters. The basic electromagnetic and heat conduction equations are discussed, and a transformation will be introduced for the calculation of the electromagnetic field outside the material. The nonlinear equation system resulting from discretization is solved by an iterative method, whose relaxation factor is optimized during the iteration. Experiences gained in the course of the numerical calculations are reported, and results of a calculation performed with specific physical data are described.

Date: 1978
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Persistent link: https://EconPapers.repec.org/RePEc:eee:matcom:v:20:y:1978:i:1:p:28-36

DOI: 10.1016/0378-4754(78)90051-4

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