A model for the simulation of a two MOS-transistor inverter

R.S. Ferguson and D. Sprevak

Mathematics and Computers in Simulation (MATCOM), 1983, vol. 25, issue 3, 249-258

Abstract: Using a physical model to represent the response of a MOS transistor, observations of the output voltage of a two-transitor inverter circuit are generated. The simulated observations are used to assemble a data base from which a statistical model for the inverter is constructed. This statistical model generates the distribution of the output of the inverter with greater efficiency than the physical model and thus it enables the simulation of complex multi-inverter circuits.

Date: 1983
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
http://www.sciencedirect.com/science/article/pii/0378475483901015
Full text for ScienceDirect subscribers only

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:eee:matcom:v:25:y:1983:i:3:p:249-258

DOI: 10.1016/0378-4754(83)90101-5

Access Statistics for this article

Mathematics and Computers in Simulation (MATCOM) is currently edited by Robert Beauwens

More articles in Mathematics and Computers in Simulation (MATCOM) from Elsevier
Bibliographic data for series maintained by Catherine Liu ().