Numerical approach of a free boundary in the junction field effect transistor – MESFET

J Abouchabaka, R Aboulaı̈ch and A Souissi

Mathematics and Computers in Simulation (MATCOM), 1998, vol. 47, issue 6, 531-539

Abstract: This paper presents the numerical approach of the free boundary by using shape optimization method. The numerical simulation field effect transistor MESFET is possible with the Laplace–Poisson model, which introduces two regions, respectively, known by “charge neutrality region” and “depletion region”, separated by some free boundary.

Keywords: Semiconductor problem; Free-boundary problem; Shape optimization method (search for similar items in EconPapers)
Date: 1998
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Citations: View citations in EconPapers (1)

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Persistent link: https://EconPapers.repec.org/RePEc:eee:matcom:v:47:y:1998:i:6:p:531-539

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