Quasi-hydrodynamic modelling and computer simulation of coupled thermo-electrical processes in semiconductors

R.V.N. Melnik and Hao He

Mathematics and Computers in Simulation (MATCOM), 2000, vol. 52, issue 3, 273-287

Abstract: The quasi-hydrodynamic model for semiconductor devices is a typical example of non-local models which, in contrast to the conventional drift-diffusion models, allows to account for non-equilibrium processes in semiconductor plasma. In this paper, we present results of a numerical simulation of semiconductor devices using the quasi-hydrodynamic model. The results have been obtained with the package SCSIMU, a C++ based program in which efficient exponential difference schemes for the quasi-hydrodynamic model have been implemented. Algorithmic procedures and modelling of realistic semiconductor devices such as ballistic and PIN diodes are discussed with numerical results.

Keywords: Semiconductor device simulation; Quasi-hydrodynamic models; Exponential difference schemes (search for similar items in EconPapers)
Date: 2000
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Persistent link: https://EconPapers.repec.org/RePEc:eee:matcom:v:52:y:2000:i:3:p:273-287

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