A comparison between different Monte Carlo models in simulation of hole transport in 4H-SiC

H.-E. Nilsson, E. Bellotti, M. Hjelm and K. Brennan

Mathematics and Computers in Simulation (MATCOM), 2001, vol. 55, issue 1, 199-208

Abstract: A Monte Carlo (MC) study of the hole transport in 4H-SiC is presented using three different MC models. The three models represent different approximation levels regarding band structure and scattering formulation. The most advanced model is a completely k-vector dependent full band model while the simplest model uses three analytical bands with energy dependent scattering rates. The intermediate MC model uses a full band structure calculated using a simple k·p formulation. A comparison between the models in terms of coupling constants, scattering rate, temperature dependent mobility and saturation velocity is presented.

Keywords: Monte Carlo simulation; Charge transport; Impact ionization; 4H-SiC (search for similar items in EconPapers)
Date: 2001
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Persistent link: https://EconPapers.repec.org/RePEc:eee:matcom:v:55:y:2001:i:1:p:199-208

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