The Monte Carlo method for semi-classical charge transport in semiconductor devices

H. Kosina and M. Nedjalkov

Mathematics and Computers in Simulation (MATCOM), 2001, vol. 55, issue 1, 93-102

Abstract: A brief review of the semi-classical Monte Carlo method for semiconductor device simulation is given, covering the standard Monte Carlo algorithms, variance reduction techniques, the self-consistent solution, and the physical semiconductor model including band structure and scattering mechanisms. The link between physically-based Monte Carlo methods and the numerical method of Monte Carlo integration is considered. The integral representations and the conjugate equations are presented for the transient and the steady-state Boltzmann equation. From these equations the standard algorithms as well as a variety of new algorithms can be derived in a formal way.

Keywords: Monte Carlo method; Boltzmann equation; Semiconductor devices (search for similar items in EconPapers)
Date: 2001
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Persistent link: https://EconPapers.repec.org/RePEc:eee:matcom:v:55:y:2001:i:1:p:93-102

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