Numerical study of quantum transport in carbon nanotube transistors

M. Pourfath, H. Kosina and S. Selberherr

Mathematics and Computers in Simulation (MATCOM), 2008, vol. 79, issue 4, 1051-1059

Abstract: A deeper understanding of quantum effects in nano-electronic devices helps to improve the functionality and to develop new device types. The performance of carbon nanotube (CNT) field-effect transistor is studied using the non-equilibrium Green’s function (NEGF) formalism. The effects of elastic and inelastic scattering and the impact of parameters, such as electron–phonon coupling strength and phonon energy, on the device performance are analyzed.

Keywords: Nanotube transistors; Electron–phonon interaction; Quantum transport (search for similar items in EconPapers)
Date: 2008
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Persistent link: https://EconPapers.repec.org/RePEc:eee:matcom:v:79:y:2008:i:4:p:1051-1059

DOI: 10.1016/j.matcom.2007.09.004

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