Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations

T. Ezaki, D. Navarro, Y. Takeda, N. Sadachika, G. Suzuki, M. Miura-Mattausch, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Kumashiro and S. Miyamoto

Mathematics and Computers in Simulation (MATCOM), 2008, vol. 79, issue 4, 1096-1106

Abstract: We develop a non-quasi-static MOSFET compact model suitable for simulating RF circuits operating under GHz frequency. The model takes into account the carrier dynamics by incorporating the time delay for the carriers to form a channel. Both the time-domain and frequency-domain expressions are successfully derived from the same basic equation by using the proposed modeling methodology, and the consistency of the both representations are verified. The model accuracy in predicting transient currents is demonstrated by comparing with simulation results of a 2D device simulator. The developed NQS model is implemented into SPICE3f5 and achieves stable circuit simulations with only 3% simulation time increase.

Keywords: Non-quasi-static effect; Time domain; Frequency domain; Surface-potential; MOSFET compact model (search for similar items in EconPapers)
Date: 2008
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Persistent link: https://EconPapers.repec.org/RePEc:eee:matcom:v:79:y:2008:i:4:p:1096-1106

DOI: 10.1016/j.matcom.2007.10.008

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