An MTO theory for the calculation of deep levels in semiconductors due to a substitutional impurity cluster

R. Rotthier, L. Scheire and P. Phariseau

Physica A: Statistical Mechanics and its Applications, 1980, vol. 104, issue 1, 233-242

Abstract: In this paper an MTO method is presented to calculate deep levels in semiconductors due to a substitutional impurity cluster. The present approach combines several attractive features of both KKR and LCAO techniques. Furthermore the energy dependence is much more transparent than in the standard KKR theory.

Date: 1980
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:104:y:1980:i:1:p:233-242

DOI: 10.1016/0378-4371(80)90084-9

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