An MTO theory for the calculation of deep levels in semiconductors due to a nonsubstitutional impurity cluster

R. Rotthier, L. Scheire and P. Phariseau

Physica A: Statistical Mechanics and its Applications, 1981, vol. 108, issue 2, 622-630

Abstract: In this paper an MTO method is presented to calculate deep levels in semiconductors due to a nonsubstitutional impurity cluster. Through the introduction of this cluster, not only can we allow for charge transfer, but also lattice relaxation is incorporated. In addition, the theory is applicable to the case of an interstitial imperfection.

Date: 1981
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:108:y:1981:i:2:p:622-630

DOI: 10.1016/0378-4371(81)90157-6

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