Experimental investigation of two-dimensional In Ge thin films

Leandro R. Tessler and Guy Deutscher

Physica A: Statistical Mechanics and its Applications, 1989, vol. 157, issue 1, 154-158

Abstract: We report low temperature measurements of the resistivity of two-dimensional inhomogeneous In Ge thin films, prepared by electron beam co-deposition of the constituents onto a cold (77 K) substrate. Samples with a wide range of resistances (up to MΩ/□) were obtained. For In concentrations between 20 and 50 vol% a double superconducting transition is observed. Although the dependence of the resistivity on In concentration hints percolative behavior, the temperature dependence of the resistivity and the I-V curves can only be described by considering the vortex flow resistance and the Kosterlitz-Thouless transition

Date: 1989
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:157:y:1989:i:1:p:154-158

DOI: 10.1016/0378-4371(89)90292-6

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