Optical absorption and electrical conductivity in amorphous Ge/SiOx superlattices

A. Bittar, G.V.M. Williams and H.J. Trodahl

Physica A: Statistical Mechanics and its Applications, 1989, vol. 157, issue 1, 411-417

Abstract: We have produced high quality amorphous Ge/SiOx superlattice films with periods ranging from 2 to 30 nm. Normal incidence optical spectroscopy is used to determine the effective-medium absorption edge, identical in this geometry to the interband edge in the narrow band gap layers (Ge). The edge shows a blue shift associated with quantum confinement in Ge layers thinner than 5 nm. A simple Kronig-Penney model fits the results if we assume conduction- and valence-band edge discontinuities of 1.1 and 0.3 eV, respectively. DC conductivity measurements parallel to the layers show the effects of 2D confinement on hopping conductivity.

Date: 1989
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:157:y:1989:i:1:p:411-417

DOI: 10.1016/0378-4371(89)90336-1

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