One-dimensional transport phenomena in GaAs heterojunction structures

M. Pepper, R.J. Brown, C.G. Smith, D.A. Wharam, M.J. Kelly, R. Newbury, H. Ahmed, D.G. Hasko, D.C. Peacock, J.E.F. Frost, D.A. Ritchie and G.A.C. Jones

Physica A: Statistical Mechanics and its Applications, 1990, vol. 168, issue 1, 112-120

Abstract: We present an outline of phenomena based around ballistic transport in structures prepared from the high-mobility electron gas in GaAs-AlGaAs heterojunctions. The quantum effects displayed can be understood on the basis of simple physical arguments. The principal effect considered here is the quantisation of the ballistic resistance in split gate structures and interference phenomena in quantum box structures. We also consider Coulomb effects which can occur when the relevant capacitance becomes very small.

Date: 1990
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:168:y:1990:i:1:p:112-120

DOI: 10.1016/0378-4371(90)90362-V

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