Optical absorption, disorder and the Anderson transition

Z. Ovadyahu

Physica A: Statistical Mechanics and its Applications, 1993, vol. 200, issue 1, 462-468

Abstract: The optical gap, Eg, of amorphous indium-oxide films is measured as a function of static disorder near the metal-insulator transition. On the insulating side of the transition the optical gap obeys a scaling relation, ΔEg = -E∗Δg where E∗ is of the order of the Fermi energy of the given sample and g≡KFl. These results are ascribed to the continuous shift of the mobility-edge in the conduction band with disorder.

Date: 1993
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:200:y:1993:i:1:p:462-468

DOI: 10.1016/0378-4371(93)90547-H

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