Hopping spectroscopy in doped germanium near the metal-insulator transition

I. Shlimak, M. Kaveh, M.J. Lea, P. Fozooni, P. Stefanyi and A.N. Ionov

Physica A: Statistical Mechanics and its Applications, 1993, vol. 200, issue 1, 483-490

Abstract: The density of states (DOS) in the vicinity of the Fermi level controls all transport phenomena at low temperatures near the metal-insulator transition (MIT). The well-known method for DOS-determination on the metallic side of the MIT, the so-called “tunneling spectroscopy”, is inapplicable on the insulating side because of the high sample resistance at low temperatures. In this work a new method for DOS-determination on the insulating side is presented. The method is based on the measurements of variable range hopping (VRH) resistance in magnetic fields. By analogy this method can be called “hopping spectroscopy”.

Date: 1993
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:200:y:1993:i:1:p:483-490

DOI: 10.1016/0378-4371(93)90550-N

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