Raman response of porous silicon

Miguel Cruz and Chumin Wang

Physica A: Statistical Mechanics and its Applications, 1994, vol. 207, issue 1, 168-173

Abstract: A microscopic theory for obtaining the Raman response of a porous solid is developed by using the Green's function technique, which takes into account the long-range correlation of all atomic vibrations. The theory is applied to the porous silicon, which is modeled by periodic columnar pores in the direction [001] of the crystalline silicon. The Raman peak of porous silicon shifts toward lower energy and the dependence of the shift on the porosity is analyzed for different porous distributions. The comparison between experimental and theoretical Raman spectra is discussed.

Date: 1994
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:207:y:1994:i:1:p:168-173

DOI: 10.1016/0378-4371(94)90369-7

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