A first-principles study of the electronic properties of silicon quantum wires

R.J. Needs, A.J. Read, K.J. Nash, S. Bhattarcharjee, A. Qteish, L.T. Canham and P.D.J. Calcott

Physica A: Statistical Mechanics and its Applications, 1994, vol. 207, issue 1, 411-419

Abstract: We describe the results of first-principles pseudopotential calculations for H-terminated Si wires, with thickness up to 16 Å, which yield the band gaps, effective masses and optical matrix elements. The zero-phonon radiative lifetime for recombination of localised excitons in a 16 Å-wide wire is calculated to be 560 μs. This is in reasonable agreement with the value of 130 μs deduced from experiments on samples of porous Si. Comparison with effective-mass theory indicates that the latter is likely to be valid for wires wider than about 33 Å. Our results are consistent with a model in which the luminescent properties of porous Si are due to quantum-confined carriers in wire-like crystalline Si structures.

Date: 1994
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:207:y:1994:i:1:p:411-419

DOI: 10.1016/0378-4371(94)90403-0

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