Spatial distribution of electron in doped films

B.S. Tošić, L.J.D. Mašković and R.M. Maksimović

Physica A: Statistical Mechanics and its Applications, 1994, vol. 211, issue 4, 475-488

Abstract: We have analysed the changes induced by the doping of Fermi-electron density in films. Two types of doping were studied: sputtering and vaporization and it was concluded that it is easier to move the maximal density towards the boundary surface by vaporization. For this reason, vaporization is a more perspective method for the current delocalization in new high-temperature superconductors.

Date: 1994
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:211:y:1994:i:4:p:475-488

DOI: 10.1016/0378-4371(94)00137-5

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