The thermoelectric power, the dark electrical resistivity and the grain boundary potential barrier in CdIn2Se4 thin films

D. Abdel Hady, A.A. El-Shazly, H.S. Soliman and E.A. El-Shazly

Physica A: Statistical Mechanics and its Applications, 1996, vol. 226, issue 3, 324-329

Abstract: The thermoelectric power (Seebeck coefficient S) was measured for several preannealed CdIn2Se4 thin films of different thicknesses. The thermoelectric power measurements indicate that the preannealed CdIn2Se4 thin films are n-type semiconductors. The thermoelectric was utilized to calculate the free charge carrier concentration in the temperature range of 298–453 K.

Keywords: Thermoelectric power; Thin films; Grain boundaries; Cadmium compounds (search for similar items in EconPapers)
Date: 1996
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:226:y:1996:i:3:p:324-329

DOI: 10.1016/0378-4371(95)00266-9

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