Critical behavior of resistivity and Hall resistivity in percolating ferromagnetic metal-insulator films

A.B. Pakhomov and X. Yan

Physica A: Statistical Mechanics and its Applications, 1996, vol. 229, issue 3, 402-409

Abstract: Resistivity ϱxx and Hall resistivity ϱxy were measured as functions of the magnetic field, temperature, and the metal volume fraction x, on a series of percolating Ni SiO2 granular films. At 5 K, the data for the metallic samples were fitted to power law dependencies of the forms, ϱxx ∝ [(x − xc)/xc]−t and ϱxy ∝ [(x − xc)/xc]−g, with xc = 0.6. The critical exponents of the resistivity t = 2.7 ± 0.2, the extraordinary Hall resistivity gs = 2.0 ± 0.2 and the ordinary Hall resistivity g0 = 1.8 ± 0.3 were found to be notably larger than the predictions for discrete percolation models (t ≈ 2 and g ≈ 0.4–0.5). We suggest that a percolation model incorporating localization can explain that contradiction. In the region of transition from metallic conduction to thermally activated tunneling, 0.53 < x < 0.6, the extraordinary Hall resistivity ϱxys was found to be saturated at a value > 100μΩ cm, which is almost four orders of magnitude greater than that of pure Ni.

Date: 1996
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:229:y:1996:i:3:p:402-409

DOI: 10.1016/0378-4371(96)00023-4

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