Incoherent mesoscopic phenomena in semiconductor structure of macroscopic size

B.A. Aronzon, V.V. Rylkov, A.S. Vedeneev and J. Leotin

Physica A: Statistical Mechanics and its Applications, 1997, vol. 241, issue 1, 259-266

Abstract: In Si : B MOS-structures (NB = 1.2 × 1018 cm−3), the formation of quasi-2D channel of hopping conductivity occurs in the region, where Fermi energy crosses the impurity band, shifted by gate voltage Vg. Rising gate voltage above zero (Vg > 0, the case of depletion) results in reproducible fluctuations of transverse voltage Vy between Hall probes, at temperatures 4.2–30 K and magnetic fields B up to 1 T, in spite of the macroscopic size of the sample (150 x 50 μm2) and the potential probe ledges (15 x 5 μm2).

Keywords: Mesoscopics; Hopping conductivity; Percolation; MOS structures; Hall voltage (search for similar items in EconPapers)
Date: 1997
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:241:y:1997:i:1:p:259-266

DOI: 10.1016/S0378-4371(97)00093-9

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